Current Projects
DARPA Phase 1 SBIR: CAD Tool Development for 3D Integrated Circuits
NSF Phase 1 SBIR: SiC Based Power Converters for Hybrid Vehicles and Power Electronic Applications
MIPS Phase 1: Energy Monitoring System using Smart Sensor Networks
NASA Phase 1 SBIR: Radiation Hardened/Tolerant and Cryogenic Temperature Electronics
Future Projects
DARPA: Design and Development of Infrared Rectennas for Energy Harvesting
NSF: Silicon Carbide Based High Temperature MOS IC Design and Development |
DARPA Phase 1 SBIR: CAD Tool Development for 3D Integrated Circuits
3D integrated circuits have the potential of increasing the functionality of electronics. By transforming from the existing 2D paradigm to 3D, significantly more functionality can be fit into a finite volume. Processor structures can be envisioned where input/output is directly connected to memory or bus lines in the vertical or third dimension, thereby enabling parallel processing structures for digital IC’s. This has the potential of greatly increasing data bandwidth in digital processors. 3D integration can significantly reduce the need for multi-chip modules by integrating functionalities typically found in different chips into a single 3D structure thereby eliminating the intrinsic delay resulting from passive I/O structures.3D integration can be very...
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NSF Phase 1 SBIR: SiC Based Power Converters for Hybrid Vehicles and Power Electronic Applications
Our goal is to develop CAD tools, design metrics, and technical know-how for next generation of super-efficient high-current high-voltage Silicon Carbide (SiC) based power converter devices, circuits and systems, targeted primarily towards commercial and military electric vehicles (EV), hybrid-electric vehicles (HEV) and fuel-cell vehicles (FCV).SiC power devices will usher in a paradigm shift in...
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MIPS Phase 1: Energy Monitoring System using Smart Sensor Networks
We are designing a residential sensor network system with the following attributes would prove very beneficial for helping to monitor energy usage. The residential system must be sufficiently inexpensive so that the property owner would choose to purchase it. For example, a typical system should cost a home-owner approximately $100 - $200, and approximately $1000 for a small commercial building. The sensors will be very easy to install and will simply be placed in...
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NASA Phase 1 SBIR: Radiation Hardened/Tolerant and Cryogenic Temperature Electronics
We are developing CAD tools, models and methodologies for electronics designfor circuit operation in extreme environments with a focus on very low temperature and radiation effects. These new tools and methodologies will help enable NASA to design next generation electronics. Such capabilities will significantly improve reliability, performance and lifetime of electronics that are used for space applications, including satellites and space travel. This will be achieved through the development of novel physics-based modeling techniques and verified by experiment. The new cryogenic design tools will greatly reduce the chances of error during actual circuit implementation, and thus reduce the number of design cycles, thereby substantially decreasing fabrication times and expenses. Models and CAD tools are relatively inexpensive as compared to fabrication costs, thus the results of this project should provide a very large return on investment.
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DARPA: Design and Development of Infrared Rectennas for Energy Harvesting
We propose to help solve the energy crisis by directly harvesting energy from infrared radiation sources through the use of micro-antennas coupled to rectifying diodes and storage capacitors. The general concept is to combine antennas with rectifiers to form an array consisting of millions of micron-size rectennas. An example rectenna for solar energy harvesting consists of...
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NSF: Silicon Carbide Based High Temperature MOS IC Design and Development
The expected ability of MOS SiC based integrated circuits to operate at extremely high temperatures makes them very attractive for a wide variety of consumer and industrial electronics applications. Currently, Silicon on Insulator (SOI) is used for high temperature IC MOSFET. However, SOI can only operate below 220 oC, leaving a void for higher temperature applications. We expect to fill this void with SiC MOSFET integrated circuits. Applications for these high temperature SiC MOSFET ICs include...
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